Title :
High resistivity, low loss InGaAlAs/InP optical waveguides grown by low-temperature MBE
Author :
Kunzel, H. ; Grote, N. ; Albrecht, P. ; Bottcher, J. ; Bornholdt, C.
Author_Institution :
Heinrich-Hertz-Inst. fuer Nachrichtentech., Berlin GmBH, Germany
Abstract :
The authors present a study of material properties relevant to optical waveguides of MBE (molecular-beam epitaxy) grown InGaAlAs ( gamma /sub g/=1.06 mu m) layers lattice-matched to InP. In particular, the impact of the substrate temperature was investigated. MBE growth of In/sub 0.52/Ga/sub 0.18/Al/sub 0.30/As ( gamma /sub g/=1.06 mu m) layers in the temperature range of 400-450 degrees C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses of well below 2 dB/cm at gamma =1.55 mu m but also high resistivity of >10/sup 4/ Omega -cm. The refractive index of In/sub 0.52/Ga/sub 0.18/Al/sub 0.30/As was estimated to be 3.207+or-0.03 at gamma =1.55 mu m.<>
Keywords :
aluminium compounds; electronic conduction in crystalline semiconductor thin films; gallium arsenide; indium compounds; integrated optics; molecular beam epitaxial growth; optical losses; optical waveguides; refractive index; semiconductor epitaxial layers; semiconductor growth; 1.06 micron; 1.55 micron; 10/sup 4/ ohmcm; 400 to 450 degC; In/sub 0.52/Ga/sub 0.18/Al/sub 0.30/As; InGaAlAs-InP; InP; high resistivity; high-quality; low loss InGaAlAs/InP optical waveguides; low propagation losses; low-temperature MBE; material properties; molecular-beam epitaxy; refractive index; substrate temperature; Conductivity; Indium phosphide; Material properties; Molecular beam epitaxial growth; Optical losses; Optical refraction; Optical variables control; Optical waveguides; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235655
