Growth of InP/GaInAs at reduced temperature using tertiarybutyl sources, with application to InP-based heterostructure bipolar transistors

Author

McDermott, B.T. ; Burke, W.E. ; Seabury, C.W. ; Ho, W.J.

Author_Institution

Rockwell Int. Sci. Center, Thousand Oaks, CA, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

144

Lastpage

146

Abstract

The lower decomposition temperatures of tertiarybutylarsine and tetriarybutylphosphide relative to their hydride alternatives were used to optimally grow high-quality InP and lattice-matched GaInAs at 500 degrees C. Doping with diethylzinc was achieved as high as 2.8*10/sup 19/ cm/sup -3/. The material was demonstrated by fabrication of both single and double heterostructure bipolar transistors that exhibited encouraging device characteristics for low-power applications. This is believed to be the first demonstration of InP-based transistors using all tertiarybutyl Group V sources.<>

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; 500 degC; InP-GaInAs growth; InP-based heterostructure bipolar transistors; MOCVD; decomposition temperatures; diethylzinc doping; double HBT; high-quality InP; lattice-matched GaInAs; low-power applications; reduced temperature; single HBT; tertiarybutyl sources; tertiarybutylarsine; tetriarybutylphosphide; Bipolar transistors; Chemical vapor deposition; Doping; Fabrication; Heterojunction bipolar transistors; Indium phosphide; MOCVD; Safety; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235656

Filename

235656