Title :
Deep levels analysis of Si doped MBE grown AlInAs layers
Author :
Hoenow, H. ; Bach, H.-G. ; Bottcher, J. ; Gueissaz, F. ; Kunzel, H. ; Scheffer, F. ; Schramm, C.
Author_Institution :
Inst fuer Werkstoffe und Verfahrenstechnik, Humboldt-Universitat, Berlin, Germany
Abstract :
AlInAs layers lattice matched to InP were grown by molecular beam epitaxy (MBE). To assess the influence of the MBE growth temperature T/sub g/ on the layer quality, T/sub g/ was varied in the range of 200 to 580 degrees C. The Schottky contact quality and the deep level properties were studied by capacitance-voltage (C-V) and current-voltage (I-V) measurements and by deep-level transient spectroscopy (DLTS), respectively. Two specific electron traps were detected, where a correlation between the growth temperature and the trap concentration has been established. These two traps, labelled TDE 1 and TDE 2, also appeared in AlInAs material grown by different MBE and MOVPE (metal-organic vapor phase epitaxy) equipment.<>
Keywords :
III-V semiconductors; Schottky effect; aluminium compounds; deep level transient spectroscopy; deep levels; electron traps; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon; 200 to 580 degC; AlInAs:Si-InP; DLTS; MBE growth temperature; Schottky contact quality; Si doped MBE grown AlInAs layers; capacitance voltage measurement; current voltage measurement; deep level properties; deep-level transient spectroscopy; electron traps; layer quality; molecular beam epitaxy; trap concentration; Capacitance measurement; Capacitance-voltage characteristics; Current measurement; Electron traps; Epitaxial growth; Indium phosphide; Lattices; Molecular beam epitaxial growth; Schottky barriers; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235658
