Current blocking behaviour of p/n/SI-InP:Fe/n structures at temperatures between 25 and 200 degrees C

The authors report the current blocking behavior of certain p/n/SI-InP:Fe/n structures at various temperatures between 25 an 200 degrees C. The doping level and the thickness of the hole barrier n-InP layer were varied. As long as the thickness and doping level are at least 0.3 mu m and 5*10/sup 17/ cm/sup -3/ respectively, these structures are almost as resistive as n/SI-InP:Fe/n within less than two orders of magnitude up to 200 degrees C. However, if the hole barrier layer is not sufficiently doped, the p/n/SI-InP:Fe/n structure behaves similarly to the p/SI-InP:Fe/n structure.<>