Title :
Optical characterizations of lattice matched and strained GaInAs/AlInAs single quantum wells
Author :
Tabata, A. ; Benyattou, T. ; Moneger, S. ; Baltagi, Y. ; Grange, J. ; Guillot, G. ; Georgakilas, A. ; Zekentes, K. ; Halkias, G.
Author_Institution :
Lab. de Phys. de la Matiere, INSA de Lyon, Villeurbanne, France
Abstract :
The authors report a study of optical properties of lattice matched (x=0.53) and strained (x=0.60) In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.48/As single quantum wells, grown by molecular beam epitaxy (MBE). A set of optical spectroscopy techniques, namely, photoluminescence (PL), photoconductivity (PC), photoreflectance (PR), and photoluminescence excitation (PLE), have been used. By means of low-temperature PC measurements, the role of strain in introducing some defects is analyzed. The conduction band discontinuity at 300 K and 5 K is determined with data of PR and PLE measurements as a function of x. Results have shown the increase of Delta E/sub c/ values with the increase of indium concentration in the InGaAs quantum well.<>
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; indium compounds; luminescence of inorganic solids; photoconductivity; photoluminescence; photoreflectance; semiconductor quantum wells; 300 K; 5 K; MBE; conduction band discontinuity; lattice matched InGaAs-In/sub 0.52/Al/sub 0.48/As; molecular beam epitaxy; optical properties; optical spectroscopy techniques; photoconductivity; photoluminescence; photoluminescence excitation; photoreflectance; strained GaInAs/AlInAs single quantum wells; Capacitive sensors; Indium phosphide; Laser excitation; Lattices; Molecular beam epitaxial growth; Photoluminescence; Strain measurement; Substrates; Temperature measurement; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235660
