DocumentCode :
3308398
Title :
Deposition of GaInAs/GaInAsP MQWs on patterned substrates
Author :
Perrin, S.D. ; Aylett, M.R. ; Cooper, D.M. ; Murrell, D.L.
Author_Institution :
BT Lab., Martlesham Heath, Ipswich, UK
fYear :
1992
fDate :
21-24 April 1992
Firstpage :
125
Lastpage :
128
Abstract :
It is pointed out that layer thicknesses can be influenced by growing epitaxial material on a substrate patterned with ridges and channels, due to both the differences in growth rates on different crystallographic planes and in the diffusion rates of the species from adjacent low growth-rate planes. Growth rate enhancements have been seen in layers grown on ridges. Thickness variations can also be achieved by growing material through a window held a small distance above the substrate surface. Growth rate reductions have been shown for GaAs/AlGaAs structures grown in this manner. It is noted that these observed variations can be exploited in multi-quantum well (MQW) structures where the emission wavelength depends on the well thickness. This allows the possibility, for example, of single-stage growth of emitter/waveguide structures.<>
Keywords :
III-V semiconductors; cathodoluminescence; gallium arsenide; indium compounds; luminescence of inorganic solids; semiconductor growth; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; BH lasers; GaInAs-GaInAsP; GaInAs/GaInAsP MQWs; MQW; atmospheric pressure MOVPE; cathodoluminescence; channels; crystallographic planes; diffusion rates; emission wavelength; emitter/waveguide structures; epitaxial material; growth rates; layer thicknesses; patterned substrates; ridges; single-stage growth; thickness variations; well thickness; Electron beams; Electron optics; Etching; Indium phosphide; Optical microscopy; Quantum well devices; Scanning electron microscopy; Substrates; Thickness measurement; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
Type :
conf
DOI :
10.1109/ICIPRM.1992.235661
Filename :
235661
Link To Document :
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