Enhancement of quality factor in RF-MEMS spiral inductors by etching out substrate

Author

Long, Haibo ; Zhang, Yaojiang ; Feng, Zhenghe

Author_Institution

Dept. of Electr. Eng., Tsinghua Univ., Beijing, China

fYear

2002

fDate

17-19 Aug. 2002

Firstpage

1166

Lastpage

1169

Abstract

It is well known that substrate coupling degrades the Q value of spiral inductors. By partial or whole substrate etching out underneath the inductors, the Q of spiral inductors is improved. This paper extends the partial element equivalent circuit (PEEC) method for fast-accuracy electromagnetic analysis of such substrate coupling in RF-MEMS spiral inductors. By introducing electrical boundary conditions into PEEC, the capacitance matrix is extended to include substrate coupling. With the equivalent of charges in the interface, Green functions in uniform dielectric regions can be used in the calculations. The numerical results show good agreement with published measurement data.

Keywords

Green´s function methods; Q-factor; capacitance; electromagnetic coupling; equivalent circuits; etching; inductors; interface states; micromechanical devices; microwave devices; numerical analysis; Green functions; PEEC method; RF-MEMS spiral inductors; capacitance matrix extension; electrical boundary conditions; fast-accuracy electromagnetic analysis; interface charges; measurement data; numerical analysis; partial element equivalent circuit method; quality factor enhancement; substrate coupling; substrate etch-out; uniform dielectric regions; Coupling circuits; Degradation; Dielectric substrates; Electromagnetic analysis; Equivalent circuits; Etching; Inductors; Q factor; Radiofrequency microelectromechanical systems; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002. 2002 3rd International Conference on

Print_ISBN

0-7803-7486-X

Type

conf

DOI

10.1109/ICMMT.2002.1187915

Filename

1187915