InGaAs molecular beam epitaxy in InP wells prepared by reactive ion etching

Author

Georgakilas, A. ; Zekentes, K. ; Tsagaraki, K. ; Lefebvre, P. ; Allegre, J. ; Christou, A.

Author_Institution

Found. for Res. & Technol.-Hellas, Crete, Greece

fYear

1992

fDate

21-24 April 1992

Firstpage

101

Lastpage

104

Abstract

The MBE (molecular beam epitaxy) deposition of InGaAs layers in local wells of [001] InP substrates has been investigated. High-quality InGaAs windows exhibiting an excitonic peak FWHM (full width at half maximum) of 3.2 meV in 2 K PL (photoluminescence) measurements have been obtained. (InGaAs whiskers) appeared in the polycrystalline region for the higher InP preheating temperatures. The InGaAs composition was uniform in the entire areas of the windows, while a negligible thickness nonuniformity appeared in a short zone of the edges aligned along the [110] direction. The polycrystalline InGaAs on the SILOX mask was selectively lifted off with an HF solution.<>

Keywords

III-V semiconductors; excitons; gallium arsenide; indium compounds; luminescence of inorganic solids; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; sputter etching; HF solution; InGaAs composition; InGaAs molecular beam epitaxy; InP; InP preheating temperatures; InP wells; MBE; SILOX mask; [001] InP substrate; excitonic peak FWHM; high quality InGaAs windows; photoluminescence; polycrystalline region; reactive ion etching; thickness nonuniformity; Electronics packaging; Epitaxial growth; Etching; Hafnium; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Scanning electron microscopy; Substrates; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235667

Filename

235667