InGaAs/InP heterojunction bipolar transistors grown with gas source molecular beam epitaxy

Author

Feld, S.A. ; Geib, K.M. ; Beyette, F.R., Jr. ; An, X. ; Hafich, M.J. ; Robinson, G.Y. ; Wilmsen, C.W.

Author_Institution

Colorado State Univ., Fort Collins, CO, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

385

Lastpage

388

Abstract

The effects of emitter-base doping and base setback layers on recombination, emitter efficiency, and gain of InGaAs/InP heterojunction bipolar phototransistors (HPTs) were studied experimentally. Six different HPT designs were investigated; three had setback layers and three did not. All of the HPTs were fabricated from gas source MBE (molecular-beam epitaxy)-grown lattice-matched InGaAs/InP layers which were chemically etched into square mesas 380 mu m on a side. The wafers with no setback layer and high emitter-base doping produced HPTs with maximum gains only in the 50-200 range. Theoretical analysis suggests that the large variation in gain with different layer dopings and setbacks is strongly influenced by the location and width of the energy notch caused by the conduction band offset.<>

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; phototransistors; semiconductor doping; semiconductor growth; sputter etching; 380 micron; InGaAs-InP; base setback layers; chemically etched; conduction band offset; emitter efficiency; emitter-base doping; energy notch; gain; gas source MBE; heterojunction bipolar phototransistors; recombination; semiconductors; square mesas; Doping; Etching; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Lattices; Molecular beam epitaxial growth; Optical detectors; Optical sensors; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235670

Filename

235670