Title :
Characteristics of pnp InGaAlAs/InGaAs heterojunction bipolar transistors grown by molecular beam epitaxy
Author :
Dodabalapur, A. ; Chang, T.Y.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
Abstract :
The authors describe the device and material characteristics of p-n-p InGaAlAs/InGaAs HBTs (heterojunction bipolar transistors) grown by molecular beam epitaxy, and evaluate the advantages and disadvantages for high speed performance. It is noted that a study of p-n-p HBTs is a useful prelude to the investigation of complementary circuits.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; molecular beam epitaxial growth; semiconductor growth; InGaAlAs-InGaAs; complementary circuits; heterojunction bipolar transistors; high speed performance; molecular beam epitaxy; p-n-p semiconductors; Circuits; Conducting materials; Doping; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photonic band gap; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235673
