DocumentCode
3308605
Title
Study of strain effects in high performance double heterostructure In/sub x/Ga/sub 1-x/As (0.57
Author
Kusters, A.M. ; Stollenwerk, M. ; Kohl, A. ; Heuken, M. ; Heime, K.
Author_Institution
Inst. fuer Halbleitertech., RWTH, Aachen, Germany
fYear
1992
fDate
21-24 April 1992
Firstpage
371
Lastpage
374
Abstract
Strained In/sub x/Ga/sub 1-x/As/InP (0.57>
Keywords
Hall effect; III-V semiconductors; deformation; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 1 micron; 10 to 50 nm; 13 mS/mm; 300 K; 450 MHz to 2.6 GHz; 62 mS/mm; 77 K; Hall mobility; In/sub x/Ga/sub 1-x/As-InP; doping layer; p-channel MODFETs; semiconductors; strain effects; transconductance; Capacitance-voltage characteristics; Capacitive sensors; Carrier confinement; Doping; Frequency; Hall effect; Indium gallium arsenide; Indium phosphide; Strain measurement; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location
Newport, RI, USA
Print_ISBN
0-7803-0522-1
Type
conf
DOI
10.1109/ICIPRM.1992.235674
Filename
235674
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