InP MESFET with high breakdown voltage

Author

Wei Yang ; Abid, Z. ; Gopinath, A. ; Williamson, F.

Author_Institution

Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

368

Lastpage

370

Abstract

The authors report the fabrication of an InP n-channel MESFET with high breakdown voltage. Using buried p/sup +/ planar doping, they have obtained enhanced Schottky gate barrier greater than 1.0 eV and gate-drain breakdown voltage in excess of 30 V. RF measurement gave a maximum frequency of oscillation, f/sub max/, =15 GHz for the 1- mu m gate length device and 9 GHz for the 2- mu m device. The high gate-drain breakdown voltage allows these devices to pinch-off at high drain-source bias. Currently the thermal breakdown at the mesa edges limits these devices from operating at high drain current, and the RF performance is basically limited by the ohmic contacts resistivity. With optimizations in these areas, InP MESFET operating at higher power and frequency is very possible.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; indium compounds; ohmic contacts; semiconductor doping; solid-state microwave devices; 1 micron; 15 GHz; 2 micron; 9 GHz; InP; RF measurement; breakdown voltage; buried p/sup +/ planar doping; drain-source bias; enhanced Schottky gate barrier; mesa edges; n-channel MESFET; ohmic contacts resistivity; pinch-off voltage; semiconductors; thermal breakdown; Doping; Electric breakdown; Fabrication; Frequency measurement; Indium phosphide; Length measurement; MESFETs; Ohmic contacts; Radio frequency; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235675

Filename

235675