Title :
1/f noise characteristics of InP/InGaAs heterojunction bipolar transistors
Author :
Tutt, M.N. ; Pavlidis, D. ; Chau, H.-F.
Author_Institution :
Michigan Univ., Ann Arbor, MI, USA
Abstract :
The short-circuit noise characteristics of InGaAs/InP HBTs (heterojunction bipolar transistors) have been characterized in terms of frequency, bias, geometry, and temperature. Frequency dependence characteristics showed essentially 1/f noise behavior for both the collector noise spectra, S/sub IC/(f), and the base noise spectra, S/sub 1B/(f). A decrease was observed at high frequencies which was determined to be due to shallow traps with activation energy=0.07-0.1 eV. Extrapolated results estimate that the transition frequency could be as high as 100 MHz. S/sub IB/ is probably due to recombination noise. The origin of S/sub IC/ is not clear, but at low bias it seems to be due to recombination. Geometry studies revealed that the perimeter to area ratio does not have a significant effect on InP-based HBT noise. Preliminary emitter area studies have shown that the S/sub IC/ is a function of emitter area at low J/sub C/.<>
Keywords :
III-V semiconductors; electron traps; gallium arsenide; heterojunction bipolar transistors; hole traps; indium compounds; semiconductor device noise; solid-state microwave devices; 100 MHz; InP-InGaAs; activation energy; base noise spectra; bias; collector noise spectra; emitter area; frequency dependence; geometry; heterojunction bipolar transistors; recombination noise; semiconductors; shallow traps; short-circuit noise characteristics; temperature characterisation; Circuit noise; Frequency; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Low-frequency noise; Noise generators; Optical noise; Semiconductor device noise;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235676
