In situ characterization of remote plasma treated and passivated InP by integral photoluminescence

Author

Kiel, F. ; Kulisch, W. ; Kassing, R.

Author_Institution

Inst. of Tech. Phys., Kassel, Germany

fYear

1992

fDate

21-24 April 1992

Firstpage

347

Lastpage

350

Abstract

The authors report on a downstream PECVD (plasma-enhanced chemical vapor deposition) apparatus which allows low-temperature deposition of passivating and insulating films on III/V materials using silico organics as source compounds. In combination with an arrangement for the measurement of the integral photoluminescence signal, this apparatus allows process control and optimization in view of the electronic properties of the semiconductor surface. This technique allows deposition of silicon dioxide at a temperature below 150 degrees C. C(V) and I(V) measurements performed on SiO/sub 2//Si MIS capacitors showed the electronic characteristics of the oxide films to be satisfactory; C(V) curves of SiO/sub 2//InP capacitors revealed that the InP surface is not degraded by the deposition process.<>

Keywords

III-V semiconductors; indium compounds; luminescence of inorganic solids; passivation; photoluminescence; plasma CVD; semiconductor growth; semiconductor-insulator boundaries; surface electron states; InP; MIS capacitors; SiO/sub 2/-InP; SiO/sub 2/-Si; electronic properties; insulating films; integral photoluminescence; passivation; plasma-enhanced chemical vapor deposition; semiconductor surface; Capacitors; Chemical vapor deposition; Indium phosphide; Insulation; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma properties; Plasma sources; Semiconductor films;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235681

Filename

235681