Passivating SiS/sub 2/ films on InP

Author

Iyer, R. ; Ochiai, M. ; Chen, C.W. ; Lile, D.L.

Author_Institution

Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

340

Lastpage

342

Abstract

The authors have studied the passivation of InP surfaces by vacuum evaporation of silicon sulfide. SiO/sub 2//SiS/sub 2//InP MIS structures were formed by reacting the top layers of the SiS/sub 2/ with water vapor. Interface characteristics inferred from high-frequency capacitance-voltage measurements and Raman spectroscopy indicate excellent interfaces and a nonuniform tensile stress in the InP. The benefits of this approach compared to some other sulfurization techniques appear to include not only a much improved morphology of the passivated semiconductor surface but also a much less critical process to achieve optimum surface improvement.<>

Keywords

III-V semiconductors; Raman spectra of inorganic solids; indium compounds; interface electron states; metal-insulator-semiconductor structures; passivation; stress effects; surface structure; InP; MIS structures; Raman spectroscopy; SiO/sub 2/-SiS/sub 2/-InP; films; high-frequency capacitance-voltage measurements; nonuniform tensile stress; passivation; sulfurization; surface morphology; vacuum evaporation; Capacitance measurement; Capacitance-voltage characteristics; Indium phosphide; Passivation; Raman scattering; Silicon; Spectroscopy; Stress measurement; Surface morphology; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235683

Filename

235683