Carrier compensation mechanism in O/sup +/ implanted InP

Author

He, L. ; Anderson, W.A.

Author_Institution

Dept. of Electr. & Comput. Eng., State Univ. of New York, Buffalo, NY, USA

fYear

1992

fDate

21-24 April 1992

Firstpage

336

Lastpage

339

Abstract

Oxygen ion implantation in InP was studied by photoreflectance spectroscopy (PR) and electrical characterization. Current-voltage measurements were used to study the properties of Schottky diodes fabricated on the implanted InP surface. Deep-level transient spectroscopy (DLTS) was employed to investigate the defect levels and their role in the compensation process. Two more electron traps with activation energies below the conduction band by 0.47 eV and 0.28 eV were found after implantation, which is related to the implantation-induced damage. Free carriers may be trapped in certain defect levels, which decreases substrate concentration and the trap density. The compensation effect was stronger in undoped InP than in Sn-doped InP, which shows that substrate doping will affect the degree of compensation.<>

Keywords

III-V semiconductors; Schottky-barrier diodes; conduction bands; deep level transient spectroscopy; electrical conductivity of crystalline semiconductors and insulators; electron traps; indium compounds; ion implantation; oxygen; photoreflectance; DLTS; InP:O/sup +/; Schottky diodes; activation energies; compensation process; conduction band; defect levels; electrical characterization; electron traps; ion implantation; photoreflectance; semiconductors; Doping; Indium phosphide;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235684

Filename

235684