Effects of pure-hydrogen and pure-argon plasmas on the near-surface type conversion of p-InP

It is shown that, although similar solar cell junctions are formed via surface type conversion during both Ar- and H/sub 2/-plasma exposures, secondary effects due to the different plasma species can be observed. These include differences in the carrier concentration at the very near surface of the type-converted layer, and also differences in R/sub se/ (emitter sheet resistance), R/sub sh/, J/sub 01/ (reverse saturation current density), n/sub 1/ (diode ideality factor), and quantum efficiency. It is suggested that the predominant mechanism of plasma-induced type conversion, for low-doped p-InP, is ion bombardment, and that this mechanism can be assisted by effects due to H/sub 2/ passivation. Although ion bombardment appears necessary to form the junction, the extent to which this process yields beneficial results is limited to a specific range of process parameters. In order to reduce these limitations, specific effects due to several parameters have been isolated. It is believed that optimized incorporation of these parameters should lead to performance improvements in both the plasma-formed diagnostic devices and the indium tin oxide (ITO)/InP cell.<>