Title :
Sinterless contacts to shallow junction InP solar cells
Author :
Weizer, V.G. ; Fatemi, N.S. ; Korenyi-Both, A.L.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
The authors describe two contact systems that provide low contact resistance to InP solar cells that do not require subjecting the current-carrying metallization to a postdeposition sintering process. It is shown that these two systems, one nickel-based and the other silver-based, provide contact resistivity (R/sub c/) values in the low 10/sup -6/- Omega -cm/sup 2/ range, as fabricated, without the need for sintering. It is demonstrated that it is possible to achieve specific contact resistivities in the low 10/sup -6/- Omega -cm/sup 2/ range without compromising emitter integrity through the introduction of any of a number of metal-phosphide interlayers, including Ni/sub 3/P, AgP/sub 2/, and Au/sub 2/P/sub 3/.<>
Keywords :
III-V semiconductors; contact resistance; indium compounds; metallisation; semiconductor-metal boundaries; solar cells; InP-AgP/sub 2/; InP-Ni/sub 3/P; contact resistance; current-carrying metallization; emitter integrity; semiconductors; sinterless contacts; solar cells; Contacts; Etching; Heat treatment; Indium phosphide; Metallization; NASA; Photovoltaic cells; Space technology; Substrates; Thermal degradation;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235689
