Title :
Ultrahigh-speed InGaAs-based HEMT technology
Author_Institution :
Fujitsu Ltd., Atsugi, Japan
Abstract :
The HEMT (high electron mobility transistor) LSI perspective is presented, and technological challenges for VLSI are addressed, including the performance advantage in the deep-submicron range, device size and voltage scaled-down approaches, and self-aligned InGaAs-based HEMTs. In addition, the future directions of HEMT technology are projected, focusing on InGaAs-based device technology compared with GaAs-based HEMT LSI technology.<>
Keywords :
III-V semiconductors; VLSI; gallium arsenide; high electron mobility transistors; indium compounds; HEMT technology; InGaAs; LSI; VLSI; deep-submicron range; device size; semiconductor; voltage scaled-down approaches; Circuits; Delay; Epitaxial growth; Gallium arsenide; HEMTs; Large scale integration; Logic arrays; Power dissipation; Temperature; Very large scale integration;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235696
