Terahertz double-Doppler wavelength shifting of infrared optical pulses in excited semiconductor medium

Author

Scherbatko, Igor ; Nerukh, Alexander ; Iezekiel, Stavros

Author_Institution

Tech. Univ. of Radio Electron., Kharkov, Ukraine

fYear

1998

fDate

3-4 Sep 1998

Firstpage

211

Lastpage

214

Abstract

A time-domain model of an excited semiconductor medium as a moving Bragg grating is used to investigate a double-Doppler wavelength conversion of an infrared (λ₀=15 μm) 0.8 ps optical pulse. In order to investigate ultrafast electromagnetic transients, a time-domain integro-differential equation has been used for simulations. It is shown that the high drift velocity of carriers in InAs semiconductor produces a 10 THz conversion span. The converted pulse width and spectral density depend on contrast of permittivity modulation and have to be as high, as possible

Keywords

Bragg gratings; Doppler measurement; III-V semiconductors; high-speed optical techniques; indium compounds; integro-differential equations; optical frequency conversion; permittivity; 0.8 ps; 1.5 mum; InAs; InAs semiconductor; THz conversion span; converted pulse width; double-Doppler wavelength conversion; excited semiconductor medium; high carrier drift velocity; infrared optical pulses; moving Bragg grating; permittivity modulation; ps optical pulse; spectral density; terahertz double-Doppler wavelength shifting; time-domain integro-differential equation; time-domain model; ultrafast electromagnetic transients; Bragg gratings; Electron mobility; Integrodifferential equations; Optical pulses; Optical wavelength conversion; Permittivity; Pulse width modulation; Space vector pulse width modulation; Time domain analysis; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on

Conference_Location

Leeds

Print_ISBN

0-7803-4903-2

Type

conf

DOI

10.1109/THZ.1998.731731

Filename

731731