Title :
Terahertz double-Doppler wavelength shifting of infrared optical pulses in excited semiconductor medium
Author :
Scherbatko, Igor ; Nerukh, Alexander ; Iezekiel, Stavros
Author_Institution :
Tech. Univ. of Radio Electron., Kharkov, Ukraine
Abstract :
A time-domain model of an excited semiconductor medium as a moving Bragg grating is used to investigate a double-Doppler wavelength conversion of an infrared (λ0=15 μm) 0.8 ps optical pulse. In order to investigate ultrafast electromagnetic transients, a time-domain integro-differential equation has been used for simulations. It is shown that the high drift velocity of carriers in InAs semiconductor produces a 10 THz conversion span. The converted pulse width and spectral density depend on contrast of permittivity modulation and have to be as high, as possible
Keywords :
Bragg gratings; Doppler measurement; III-V semiconductors; high-speed optical techniques; indium compounds; integro-differential equations; optical frequency conversion; permittivity; 0.8 ps; 1.5 mum; InAs; InAs semiconductor; THz conversion span; converted pulse width; double-Doppler wavelength conversion; excited semiconductor medium; high carrier drift velocity; infrared optical pulses; moving Bragg grating; permittivity modulation; ps optical pulse; spectral density; terahertz double-Doppler wavelength shifting; time-domain integro-differential equation; time-domain model; ultrafast electromagnetic transients; Bragg gratings; Electron mobility; Integrodifferential equations; Optical pulses; Optical wavelength conversion; Permittivity; Pulse width modulation; Space vector pulse width modulation; Time domain analysis; Ultrafast optics;
Conference_Titel :
Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on
Conference_Location :
Leeds
Print_ISBN :
0-7803-4903-2
DOI :
10.1109/THZ.1998.731731
