Title :
InGaAs/InP double channel HEMT on InP
Author :
Enoki, Takatomo ; Arai, Kunihiro ; Kohzen, Atsuo ; Ishii, Y.
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Abstract :
The authors discuss a novel HEMT (high electron mobility transistor) channel structure, consisting of InGaAs and InP, which can utilize both the high electron mobility of InGaAs at low electric field and InP´s high drift velocity at high electric field. HEMTs with 0.6- mu m gates, a double channel, and a planar doped carrier supply layer show an extremely high transconductance of 1290 mS/mm. Such a device with a 0.7- mu m gate has a cutoff frequency of 68.7 GHz, which exceeds that of conventional InGaAs HEMTs by a factor of 1.3. It is shown that these characteristics may be related to an increase of the effective saturation velocity of electrons in the channel from 2.7*10/sup 7/ cm/s to 4.2*10/sup 7/ cm/s. Moreover, it is found that there is no kink in the I-V characteristics of double channel devices. These results indicate that InGaAs/In double-channel HEMTs have great potential for application in high-speed and high-power devices.<>
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.6 micron; 1290 mS/mm; 68.7 GHz; InGaAs-InP; InGaAs/InP double channel HEMT; channel structure; effective saturation velocity; high drift velocity; high electric field; high electron mobility; low electric field; semiconductor; Doping; Electron mobility; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Laboratories; Large scale integration; Transconductance;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235699
