Title :
A theoretical study of quantum well terahertz lasers
Author :
Donovan, K. ; Harrison, P. ; Kelsall, R.W. ; Kinsler, P.
Author_Institution :
Sch. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
A theoretical study is made of a GaAs/AlGaAs triple quantum well structure with the aim of developing a three level laser to emit in the terahertz region of the spectrum. The population inversion necessary for laser emission to take place is estimated by calculating the net nonradiative transition rates. It is found that the most effective way of achieving a population inversion is by depopulation to a strongly coupled state. The population inversion can be increased further by decreasing the barrier width between the quantum wells associated with the two lowest energy levels
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser transitions; population inversion; quantum well lasers; submillimetre wave lasers; GaAs-AlGaAs; III-V semiconductors; barrier width; depopulation; energy levels; laser emission; net nonradiative transition rates; population inversion; quantum well terahertz lasers; strongly coupled state; three level laser; triple quantum well structure; Energy states; Laser theory; Laser transitions; Optical scattering; Particle scattering; Phonons; Power engineering and energy; Quantum cascade lasers; Quantum mechanics; Quantum well lasers;
Conference_Titel :
Terahertz Electronics Proceedings, 1998. THz Ninety Eight. 1998 IEEE Sixth International Conference on
Conference_Location :
Leeds
Print_ISBN :
0-7803-4903-2
DOI :
10.1109/THZ.1998.731737
