Characterization techniques for InP

Optical and electrical characterization techniques for bulk InP are briefly reviewed. The following optical techniques are considered: spatially resolved photoluminescence at low temperatures and room temperature, Raman spectroscopy, absorption spectroscopy, and photoreflectance spectroscopy. Electrical characterization of bulk InP includes a variety of different techniques, e.g., resistivity measurements, by conventional as well as by contactless methods, carrier and dopant concentrations by Hall-effect and capacitance measurements mobility measurement by the van der Pauw technique and time-of-flight measurements, deep level impurities measurement by deep level transient spectroscopy and photo-induced current transient spectroscopy, and carrier lifetime measurement by photoconductive decay.<>