Characterization techniques for InP

Author

Benz, K. ; Bischopink, G. ; Eiche, C.

Author_Institution

Kristallographisches Inst., Albert Ludwigs Univ., Freiburg, Germany

fYear

1992

fDate

21-24 April 1992

Firstpage

22

Lastpage

23

Abstract

Optical and electrical characterization techniques for bulk InP are briefly reviewed. The following optical techniques are considered: spatially resolved photoluminescence at low temperatures and room temperature, Raman spectroscopy, absorption spectroscopy, and photoreflectance spectroscopy. Electrical characterization of bulk InP includes a variety of different techniques, e.g., resistivity measurements, by conventional as well as by contactless methods, carrier and dopant concentrations by Hall-effect and capacitance measurements mobility measurement by the van der Pauw technique and time-of-flight measurements, deep level impurities measurement by deep level transient spectroscopy and photo-induced current transient spectroscopy, and carrier lifetime measurement by photoconductive decay.<>

Keywords

Hall effect; III-V semiconductors; OBIC; Raman spectra of inorganic solids; carrier density; carrier lifetime; carrier mobility; deep level transient spectroscopy; deep levels; impurity and defect absorption spectra of inorganic solids; indium compounds; luminescence of inorganic solids; photoconductivity; photoluminescence; photoreflectance; Hall-effect; Raman spectroscopy; absorption spectroscopy; bulk InP; capacitance measurements; carrier concentration; carrier lifetime measurement; deep level impurities; deep level transient spectroscopy; dopant concentrations; electrical characterization; mobility measurement; optical techniques; photo-induced current transient spectroscopy; photoconductive decay; photoreflectance spectroscopy; resistivity measurements; semiconductor; spatially resolved photoluminescence; time-of-flight measurements; van der Pauw technique; Absorption; Capacitance measurement; Current measurement; Electric variables measurement; Indium phosphide; Photoluminescence; Raman scattering; Spatial resolution; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235701

Filename

235701