In-situ photoluminescence surface state spectroscopy for InP and InGaAs

Author

Hasegawa, H. ; Saitoh, T. ; Numata, K.-i. ; Sawada, T.

Author_Institution

Dept. of Electr. Eng., Hokkaido Univ., Sapporo, Japan

fYear

1992

fDate

21-24 April 1992

Firstpage

24

Lastpage

27

Abstract

A novel in-situ photoluminescence (PL) surface state spectroscopy technique is presented. This method allows an in-situ, contactless, and nondestructive determination of the N/sub ss/ distributions on technologically important ´free´ surfaces of semiconductors. The basic principle and a rigorous computer analysis procedure are described. The proposed technique is successfully applied to various surfaces of InP and In/sub 0.53/Ga/sub 0.47/As. The measured N/sub ss/ distributions on InP and InGaAs are U-shaped and consistent with the DIGS (disorder-induced gap state) model. The usefulness of the Si ICL (interface control layer) technique was confirmed.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; luminescence of inorganic solids; photoluminescence; surface electron states; In/sub 0.53/Ga/sub 0.47/As; InGaAs; InP; disorder-induced gap state; interface control layer; photoluminescence surface state spectroscopy; semiconductors; Charge carrier density; Chemical technology; Contacts; Epitaxial growth; Indium gallium arsenide; Indium phosphide; Photoluminescence; Shape measurement; Spectroscopy; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235702

Filename

235702