Title :
Positron annihilation study of electron irradiated InP
Author :
Bretagnon, T. ; Dannefear, S. ; Kerr, D.
Author_Institution :
Dept. of Phys., Winnipeg Univ., Man., Canada
Abstract :
A detailed study of electron-irradiation-induced defects in indium phosphide using positron lifetime spectroscopy is reported. The investigation of electron-irradiated InP showed that indium vacancy defects are produced by irradiation regardless of the type of sample. Divacancies are found in semi-insulating and lightly doped n and p type materials.<>
Keywords :
III-V semiconductors; defect electron energy states; electron beam effects; indium compounds; positron annihilation in liquids and solids; vacancies (crystal); InP; divacancies; electron-irradiation-induced defects; positron lifetime spectroscopy; semiconductor; vacancy defects; Aluminum; Crystals; Electron traps; Indium phosphide; Physics; Positrons; Silicon; Spectroscopy; Temperature measurement; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235704
