Title :
Tin incorporation in MOVPE InP/GaInAs and AlInAs/GaInAs heterostructures
Author :
Veuhoff, E. ; Rieger, J. ; Baumeister, H. ; Treichler, R.
Author_Institution :
Siemens Res. Lab., Munich, Germany
Abstract :
The authors compare the Sn incorporation behavior in InP/GaInAs and AlInAs/GaInAs heterostructures grown in the same MOVPE (metal-organic vapor-phase epitaxy) system under the same experimental conditions. In both large bandgap materials, InP and AlInAs, a good control of the electron concentration in the range of 10/sup 17/ to 3*10/sup 19/ cm/sup -3/ can be achieved by using the same Sn dopant source for the whole range of carrier concentration. However, the lower saturation concentration of the electron concentration in AlInAs might lead to some restrictions in device applications. From the dopant redistribution in InP and AlInAs bulk layers, stronger segregation effects are expected for multilayer structures containing InP layers. This is verified by data obtained in heterostructures, where the large bandgap materials InP and AlInAs are Sn doped and the GaInAs layers undoped. At the InP:Sn/GaInAs interface a significant Sn interface accumulation is detected. The results imply that for many device applications AlInAs may be preferred as the wide gap compound.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor doping; tin; vapour phase epitaxial growth; AlInAs:Sn-GaInAs; InP:Sn-GaInAs; MOVPE; Sn dopant source; carrier concentration; dopant redistribution; electron concentration; large bandgap materials; metal-organic vapor-phase epitaxy; multilayer structures; segregation effects; semiconductor; Doping; Electrons; Epitaxial growth; Epitaxial layers; Indium phosphide; Laboratories; Lattices; Nonhomogeneous media; Temperature; Tin;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235707
