Title :
Regrowth of semi-insulating iron doped InP around reactive ion etched laser mesas in [110] and [-110] directions by hydride vapour phase epitaxy
Author :
Kjebon, O. ; Lourdudoss, S. ; Wallin, J.
Author_Institution :
Swedish Inst. of Microelectron., Kista, Sweden
Abstract :
Hydride vapor phase epitaxy (HVPE) has been used for regrowth of semi-insulating iron doped InP around reactive ion etched laser mesas in [110] and [-110] directions. The regrowth morphology and the electrical properties are similar in both cases. It is also demonstrated that HVPE is a quick and easy technique to realize buried heterostructure (BH) lasers in both [110] and [-110] directions.<>
Keywords :
III-V semiconductors; indium compounds; iron; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; HVPE; InP:Fe; buried heterostructure; electrical properties; hydride vapour phase epitaxy; reactive ion etched laser mesas; regrowth morphology; semiconductor; Electric variables; Epitaxial growth; Frequency modulation; Indium phosphide; Iron; Laboratories; Microelectronics; Silicon; Temperature; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235708
