Title :
High resolution definition of buried In/sub 0.53/Ga/sub 0.47/As/InP wires by implantation induced intermixing
Author :
Oshinowo, J. ; Dreybrodt, J. ; Forchel, A. ; Emmerling, M. ; Gyuro, I. ; Speier, P. ; Zielinski, E.
Author_Institution :
Tech. Phys., Wurzburg Univ., Am Hubland, Germany
Abstract :
InGaAs/InP wire structures are fabricated by Ar/sup +/ ion implantation and rapid thermal annealing on InGaAs/InP single quantum well substrates. The observed photoluminescence emission spectra show that implantation-induced intermixing can be used to define buried InGaAs/InP wire structures with dimensions below 100 nm.<>
Keywords :
III-V semiconductors; argon; gallium arsenide; indium compounds; ion implantation; rapid thermal processing; semiconductor doping; semiconductor quantum wires; 100 nm; Ar/sup +/ ion implantation; In/sub 0.53/Ga/sub 0.47/As:Ar/sup +/-InP; buried In/sub 0.53/Ga/sub 0.47/As/InP wires; implantation induced intermixing; photoluminescence; rapid thermal annealing; semiconductor; single quantum well substrates; Argon; Indium gallium arsenide; Indium phosphide; Laser excitation; Nitrogen; Power lasers; Rapid thermal annealing; Rapid thermal processing; Temperature; Wires;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235712
