High resolution definition of buried In/sub 0.53/Ga/sub 0.47/As/InP wires by implantation induced intermixing

Author

Oshinowo, J. ; Dreybrodt, J. ; Forchel, A. ; Emmerling, M. ; Gyuro, I. ; Speier, P. ; Zielinski, E.

Author_Institution

Tech. Phys., Wurzburg Univ., Am Hubland, Germany

fYear

1992

fDate

21-24 April 1992

Firstpage

63

Lastpage

66

Abstract

InGaAs/InP wire structures are fabricated by Ar/sup +/ ion implantation and rapid thermal annealing on InGaAs/InP single quantum well substrates. The observed photoluminescence emission spectra show that implantation-induced intermixing can be used to define buried InGaAs/InP wire structures with dimensions below 100 nm.<>

Keywords

III-V semiconductors; argon; gallium arsenide; indium compounds; ion implantation; rapid thermal processing; semiconductor doping; semiconductor quantum wires; 100 nm; Ar/sup +/ ion implantation; In/sub 0.53/Ga/sub 0.47/As:Ar/sup +/-InP; buried In/sub 0.53/Ga/sub 0.47/As/InP wires; implantation induced intermixing; photoluminescence; rapid thermal annealing; semiconductor; single quantum well substrates; Argon; Indium gallium arsenide; Indium phosphide; Laser excitation; Nitrogen; Power lasers; Rapid thermal annealing; Rapid thermal processing; Temperature; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235712

Filename

235712