Low-noise photoreceiver front-end with ion implanted indium phosphide MISFET

Author

Post, G. ; Falcou, A. ; Billard, M. ; Nait-Zerrad, K. ; Scavennec, A.

Author_Institution

France Telecom CNET, Bagneux, France

fYear

1992

fDate

21-24 April 1992

Firstpage

71

Lastpage

73

Abstract

A hybrid p-i-n-FET combination of InGaAs photodiode and InP MISFET has been evaluated for medium-speed (<1 Gb/s) optical fiber communication links. This combination provides a very attractive low-noise performance, comparable to the best GaAs FET based hybrids. The results obtained imply that monolithic p-i-n-FETs with optimum performance can be designed with InP channel transistors instead of InGaAs-based FETs, which exhibit excess gate leakage and low-frequency excess noise due to the small band gap. However, it was found that heterostructure FETs with InP channel still produce an appreciable amount of low-frequency noise, even though the excess gate current is suppressed.<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 1 Gbit/s; InGaAs photodiode; InP MISFET; InP-InGaAs; excess gate current; hybrid p-i-n-FET combination; low-frequency noise; low-noise performance,; optical fiber communication links; semiconductor; FETs; Gallium arsenide; Gate leakage; Indium gallium arsenide; Indium phosphide; Low-frequency noise; MISFETs; Optical fiber communication; Optical noise; Photodiodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Conference_Location

Newport, RI, USA

Print_ISBN

0-7803-0522-1

Type

conf

DOI

10.1109/ICIPRM.1992.235714

Filename

235714