Title :
Monolithic integration of both GaInAs photodiodes and GaInAsP lasers with impedance matching circuits for 6 GHz transmissions
Author :
Renaud, J.C. ; Rondi, D. ; Hirtz, P. ; Blondeau, R. ; Maricot, S. ; Vilcot, J.P. ; Decoster, D.
Author_Institution :
Thomson-CSF, Orsay, France
Abstract :
The authors report the realization of monolithic impedance-matched lasers and photodiodes on InP substrates. The objective was to demonstrate the advantage of such an approach by using a transmission link operating at 6 GHz and 1.3 mu m. Starting from the analysis and modeling of discrete lasers and photodiodes fabricated in Thomson-CSF/LCR, the equivalent circuits of each device have been determined to design the associated impedance-matching cells.<>
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; gallium compounds; impedance matching; indium compounds; integrated optoelectronics; optical links; photodiodes; semiconductor lasers; 1.3 micron; 6 GHz; 6 GHz transmissions; GaInAs photodiodes; GaInAsP lasers; InP substrates; design; equivalent circuits; impedance matching circuits; semiconductor; Capacitance; Etching; Impedance matching; Indium phosphide; Inductance; Masers; Microwave devices; Monolithic integrated circuits; Photodiodes; Transmitters;
Conference_Titel :
Indium Phosphide and Related Materials, 1992., Fourth International Conference on
Conference_Location :
Newport, RI, USA
Print_ISBN :
0-7803-0522-1
DOI :
10.1109/ICIPRM.1992.235716
