Formation and characterization of sputtered thin film for optimizing multilayered interconnection structure

Author

Sashida, Wataru ; Kimura, Yuji

Author_Institution

Graduate Sch., Kogakuin Univ., Tokyo, Japan

fYear

2005

fDate

11-14 Dec. 2005

Firstpage

179

Lastpage

182

Abstract

UBM (under barrier metal) mounted in multilayered interconnection structure is thin film using to prevent counter diffusion between semiconductor substrate and metal line, in connection with multilayered and minute structure, thickness of UBM becomes an issue. Evaluation of UBM with the use of TEG (test element grid) chip was conducted. TEG chip is a unit device that decollates elemental structure of circuit from LSI. With the use of TEG chip, various evaluations concerning LSI structure can be easily conducted. For these reasons, the purposes of this research are to design and to manufacture TEG chip, which have relatively simple multilayered interconnection structure, and also, examinations of optimal material such as Ti-W and morphology of UBM for obtaining superior electro-migration resistance were conducted.

Keywords

electromigration; integrated circuit interconnections; integrated circuit manufacture; large scale integration; metallic thin films; titanium alloys; tungsten alloys; 10 V; 10 micron; 2 micron; 5 micron; LSI circuits; TiW; electro-migration resistance; multilayered interconnection structure; sputtered thin films; test element grid chip; under barrier metals; Circuit testing; Conducting materials; Counting circuits; Integrated circuit interconnections; Large scale integration; Manufacturing; Morphology; Semiconductor thin films; Sputtering; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Materials and Packaging, 2005. EMAP 2005. International Symposium on

Print_ISBN

1-4244-0107-0

Type

conf

DOI

10.1109/EMAP.2005.1598257

Filename

1598257