DocumentCode
3309498
Title
The impact of capacitors selection and placement to the ESL and ESR
Author
Since, Huang Jimmy Huat ; Sijher Taninder, S. ; Kai, Beh Jiun
Author_Institution
Intel Microelectron., Penang, Malaysia
fYear
2005
fDate
11-14 Dec. 2005
Firstpage
258
Lastpage
261
Abstract
High frequency capacitors are used in the power delivery network for decoupling solution. From the impedance in frequency domain, those capacitors which are located near the load current provides the high frequency decoupling solution rather than the capacitors further away. Therefore, embedded package capacitors are desired due to its high frequency decoupling effect. However, in high frequency region, inductance of the capacitors (ESL) is sensitive and can introduce high resonant in the power delivery network. The resonance causes large spike or droop if the resonate frequency is hit. In order to reduce the ESL, the placement of capacitors is important to create smaller loop inductance. The paper discusses the methodology used to model the actual capacitor placement using electrical parameters. A study on the two terminal capacitor for various package designs is done to investigate the impact of different geometry. The paper also discusses the impact of series resistance to the power delivery resonance and how it can be optimized in the capacitor placement.
Keywords
capacitors; electronics packaging; power supply circuits; capacitor placement; capacitor selection; electrical parameters; embedded package capacitors; high frequency capacitors; high frequency inductance; loop inductance; power delivery network; power delivery resonance; series resistance; two terminal capacitor; Capacitors; Circuit noise; Frequency; Inductance; Low voltage; Microprocessors; Microstrip; Noise figure; Packaging; Paramagnetic resonance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Materials and Packaging, 2005. EMAP 2005. International Symposium on
Print_ISBN
1-4244-0107-0
Type
conf
DOI
10.1109/EMAP.2005.1598272
Filename
1598272
Link To Document