• DocumentCode
    3309498
  • Title

    The impact of capacitors selection and placement to the ESL and ESR

  • Author

    Since, Huang Jimmy Huat ; Sijher Taninder, S. ; Kai, Beh Jiun

  • Author_Institution
    Intel Microelectron., Penang, Malaysia
  • fYear
    2005
  • fDate
    11-14 Dec. 2005
  • Firstpage
    258
  • Lastpage
    261
  • Abstract
    High frequency capacitors are used in the power delivery network for decoupling solution. From the impedance in frequency domain, those capacitors which are located near the load current provides the high frequency decoupling solution rather than the capacitors further away. Therefore, embedded package capacitors are desired due to its high frequency decoupling effect. However, in high frequency region, inductance of the capacitors (ESL) is sensitive and can introduce high resonant in the power delivery network. The resonance causes large spike or droop if the resonate frequency is hit. In order to reduce the ESL, the placement of capacitors is important to create smaller loop inductance. The paper discusses the methodology used to model the actual capacitor placement using electrical parameters. A study on the two terminal capacitor for various package designs is done to investigate the impact of different geometry. The paper also discusses the impact of series resistance to the power delivery resonance and how it can be optimized in the capacitor placement.
  • Keywords
    capacitors; electronics packaging; power supply circuits; capacitor placement; capacitor selection; electrical parameters; embedded package capacitors; high frequency capacitors; high frequency inductance; loop inductance; power delivery network; power delivery resonance; series resistance; two terminal capacitor; Capacitors; Circuit noise; Frequency; Inductance; Low voltage; Microprocessors; Microstrip; Noise figure; Packaging; Paramagnetic resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Materials and Packaging, 2005. EMAP 2005. International Symposium on
  • Print_ISBN
    1-4244-0107-0
  • Type

    conf

  • DOI
    10.1109/EMAP.2005.1598272
  • Filename
    1598272