• DocumentCode
    3309579
  • Title

    Variband Transferred Electron Devises

  • Author

    Storozhenko, I.P. ; Arkusha, Yu V. ; Botsula, O.V.

  • Author_Institution
    V.N. Karazin Kharkov Nat. Univ., Kharkov
  • Volume
    2
  • fYear
    2007
  • fDate
    25-30 June 2007
  • Firstpage
    602
  • Lastpage
    604
  • Abstract
    This paper studies the basic principle of the appearance and drift space charge waves in transferred electron devices (TEDs) on base A3B5 variband semiconductor compounds. The two-temperature model of the electron intervalley transfer in a variband semiconductor was applied. The operation of the Gunn diodes on base of different threefold semiconductor compounds are investigated.
  • Keywords
    Gunn diodes; III-V semiconductors; semiconductor device models; space charge waves; A3B5 variband semiconductor compounds; Gunn diode; TED; drift space charge waves; electron intervalley transfer; threefold semiconductor compound; two-temperature model; variband transferred electron device; Cathodes; Electrons; Frequency; Heating; Lattices; Phonons; Satellites; Scattering; Semiconductor diodes; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
  • Conference_Location
    Kharkov
  • Print_ISBN
    1-4244-1237-4
  • Type

    conf

  • DOI
    10.1109/MSMW.2007.4294749
  • Filename
    4294749
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3309579