A new propylamine sensor using artificial dimorphite

Author

Tsiulyanu, D. ; Marian, S. ; Guba, M. ; Potje-Kamloth, K. ; Liess, H.-D.

Author_Institution

Dept. of Phys., Tech. Univ., Chishinau, Moldova

Volume

1

fYear

1998

fDate

6-10 Oct 1998

Firstpage

75

Abstract

The sandwich metal-dimorphite(As₄S₃)-metal structure is used as a sensor for detection of propylamine (P_rNH₂) vapor. The gas induced shifts of the current-voltage characteristics as well as transient characteristics of gas-induced current are studied with respect of morphology of dimorphite films. Propylamine vapor lead to increasing of current i.e. has a doping effect. Sensitivity dependence on applied voltage and on gas concentration is found. Results are discussed in themes of gas controlled trapping of carriers injected from electrodes which influence the space charge limited current (SCLC)

Keywords

arsenic compounds; gas sensors; organic compounds; semiconductor thin films; space-charge-limited conduction; As₄S₃; artificial dimorphite; carrier injection; current-voltage characteristics; doping; film morphology; metal-As₄S₃-metal sandwich structure; propylamine sensor; space charge limited current; transient characteristics; vapor detection; Chemical sensors; Chemical technology; Current measurement; Current-voltage characteristics; Electrodes; Optical films; Substrates; Thin film sensors; Transistors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.732282

Filename

732282