Title :
A new propylamine sensor using artificial dimorphite
Author :
Tsiulyanu, D. ; Marian, S. ; Guba, M. ; Potje-Kamloth, K. ; Liess, H.-D.
Author_Institution :
Dept. of Phys., Tech. Univ., Chishinau, Moldova
Abstract :
The sandwich metal-dimorphite(As4S3)-metal structure is used as a sensor for detection of propylamine (PrNH2) vapor. The gas induced shifts of the current-voltage characteristics as well as transient characteristics of gas-induced current are studied with respect of morphology of dimorphite films. Propylamine vapor lead to increasing of current i.e. has a doping effect. Sensitivity dependence on applied voltage and on gas concentration is found. Results are discussed in themes of gas controlled trapping of carriers injected from electrodes which influence the space charge limited current (SCLC)
Keywords :
arsenic compounds; gas sensors; organic compounds; semiconductor thin films; space-charge-limited conduction; As4S3; artificial dimorphite; carrier injection; current-voltage characteristics; doping; film morphology; metal-As4S3-metal sandwich structure; propylamine sensor; space charge limited current; transient characteristics; vapor detection; Chemical sensors; Chemical technology; Current measurement; Current-voltage characteristics; Electrodes; Optical films; Substrates; Thin film sensors; Transistors; Voltage control;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732282
