Title :
Oscillation Efficiency of the Diodes with the Cathode Al0,3Ga0,7As/GaAs
Author :
Botsula, O.V. ; Prokhorov, E.D. ; Storozhenko, I.P.
Author_Institution :
Kharkov V.N.Karazin Nat. Univ., Kharkov
Abstract :
In this work the oscillation efficiency of transfer electron diodes with resonance-tunnel cathode (RTC) is investigated by modelling. The processes occurring in active region of the diode and in the areas near RTC are accounted. I-V characteristics and doping profile of the diodes are presented.
Keywords :
III-V semiconductors; aluminium compounds; cathodes; gallium arsenide; resonant tunnelling diodes; semiconductor device models; Al0.3Ga0.7As-GaAs; I-V characteristics; doping profile; resonance tunnel cathode; transfer electron diode; Anodes; Cathodes; Conductivity; Current-voltage characteristics; Diodes; Doping; Electrons; Frequency; Gallium arsenide; Tellurium;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1237-4
DOI :
10.1109/MSMW.2007.4294758
