DocumentCode :
3309762
Title :
AIN/AlxGa1-xN Resonance-Tunnel Diodes
Author :
Botsula, O.V. ; Prokhorov, E.D. ; Suzdaltsev, A.V. ; Djadchenko, A.V.
Author_Institution :
Kharkov Nat. Univ. V.N.Karazina, Kharkov
Volume :
2
fYear :
2007
fDate :
25-30 June 2007
Firstpage :
632
Lastpage :
634
Abstract :
This work investigates the possibilities of using nitrogen compounds for resonance-tunnel diodes (RTD). The I-V characteristics and transmission coefficient of RTD using AlxGa1-xN quantum well and AlN as barrier layer are presented.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; resonant tunnelling diodes; semiconductor quantum wells; wide band gap semiconductors; AlN-AlxGa1-xN; I-V characteristics; RTD; barrier layer; nitrogen compounds; quantum well; resonance tunnel diode; transmission coefficient; Aluminum gallium nitride; Conductivity; Current-voltage characteristics; Diodes; Electrons; Energy states; Gallium nitride; Indium gallium arsenide; Nitrogen; Resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1237-4
Type :
conf
DOI :
10.1109/MSMW.2007.4294759
Filename :
4294759
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3309762
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