• DocumentCode
    3309762
  • Title

    AIN/AlxGa1-xN Resonance-Tunnel Diodes

  • Author

    Botsula, O.V. ; Prokhorov, E.D. ; Suzdaltsev, A.V. ; Djadchenko, A.V.

  • Author_Institution
    Kharkov Nat. Univ. V.N.Karazina, Kharkov
  • Volume
    2
  • fYear
    2007
  • fDate
    25-30 June 2007
  • Firstpage
    632
  • Lastpage
    634
  • Abstract
    This work investigates the possibilities of using nitrogen compounds for resonance-tunnel diodes (RTD). The I-V characteristics and transmission coefficient of RTD using AlxGa1-xN quantum well and AlN as barrier layer are presented.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; resonant tunnelling diodes; semiconductor quantum wells; wide band gap semiconductors; AlN-AlxGa1-xN; I-V characteristics; RTD; barrier layer; nitrogen compounds; quantum well; resonance tunnel diode; transmission coefficient; Aluminum gallium nitride; Conductivity; Current-voltage characteristics; Diodes; Electrons; Energy states; Gallium nitride; Indium gallium arsenide; Nitrogen; Resonance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
  • Conference_Location
    Kharkov
  • Print_ISBN
    1-4244-1237-4
  • Type

    conf

  • DOI
    10.1109/MSMW.2007.4294759
  • Filename
    4294759
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3309762