Title :
Electric field-caused redistribution of mobile charged donors in semiconductors
Author :
Sheinkman, M.K. ; Kashirina, N.I. ; Kislyuk, V.V.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kyiv, Ukraine
Abstract :
The theoretical analysis is made for the opportunity of redistributing mobile point defects in a semiconductor affected by the electric field. It is assumed that the electric field is formed by voltage applied in two different ways: (i) directly to a sample, (ii) to a capacitor plates with a sample between
Keywords :
electric field effects; impurity states; point defects; semiconductors; capacitor plate; electric field; mobile charged donor redistribution; point defect; semiconductor; Cadmium compounds; Capacitors; Differential equations; Electrons; Physics; Poisson equations; Semiconductor devices; Space charge; Temperature; Voltage;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732290
