Title :
Detectors of Ultra-Violet Radiation on Basis of ZnSe Schottky Diodes
Author :
Beletsky, N.I. ; Polyansky, N.E. ; Voronkin, E.F. ; Galkin, S.N. ; Rizhikov, V.D.
Author_Institution :
Semicond. & Vacuum Electron. Dept., V.N. Karazin Kharkiv Nat. Univ., Kharkiv
Abstract :
This works presents results of measuring the electric and photovoltaic characteristics of Schottky diodes designed on the basis of polycrystal ZnSe. The volt-ampere characteristics and the dark current of the diodes are discussed for its application as ultra-violet radiation photodetector.
Keywords :
II-VI semiconductors; Schottky diodes; dark conductivity; photoconductivity; photodetectors; ultraviolet detectors; wide band gap semiconductors; zinc compounds; Schottky diode; ZnSe; dark current; photodetector; photovoltaic characteristics; polycrystal ZnSe; ultraviolet radiation detector; volt-ampere characteristics; Crystalline materials; Crystallization; Manufacturing; Photodetectors; Photodiodes; Radiation detectors; Schottky diodes; Semiconductor diodes; Voltage; Zinc compounds;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1237-4
DOI :
10.1109/MSMW.2007.4294761
