DocumentCode
330981
Title
Band discontinuities in MBE GaAlAs/GaAs/GaAlAs quantum wells from capacitance measurements
Author
Saxena, Ashok K.
Author_Institution
Dept. of Electron. & Comput. Eng., Roorkee Univ., India
Volume
1
fYear
1998
fDate
6-10 Oct 1998
Firstpage
93
Abstract
It is shown that capacitance spectroscopy on MBE grown GaAlAs/GaAs/GaAlAs quantum wells using Schottky barrier diodes combined with PL measurements provides a powerful fool in determining the band off-sets if the well is considered as a `giant´ trap. The conduction and valence band off-sets have been determined to be 72% and 28% of GaAs/GaAlAs band gap difference
Keywords
III-V semiconductors; Schottky diodes; aluminium compounds; band structure; capacitance; gallium arsenide; molecular beam epitaxial growth; photoluminescence; semiconductor quantum wells; GaAlAs-GaAs-GaAlAs; MBE GaAlAs/GaAs/GaAlAs quantum well; Schottky barrier diode; band discontinuity; band gap; capacitance spectroscopy; conduction band offset; photoluminescence measurement; valence band offset; Capacitance measurement; Electron emission; Electron traps; Energy states; Gallium arsenide; Kinetic theory; Quantum capacitance; Quantum mechanics; Schottky diodes; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.732292
Filename
732292
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