DocumentCode :
330983
Title :
Effect of composition on refractive index dispersion in Ge-Sb-S thin films
Author :
Pamukchieva, Vesela ; Szekeres, Anna ; Sharlandjiev, Peter ; Alexia, Z. ; Gartner, Mariuca
Author_Institution :
Inst. of Solid State Phys., Sofia, Bulgaria
Volume :
1
fYear :
1998
fDate :
6-10 Oct 1998
Firstpage :
101
Abstract :
GexSb40-xS60 thin films are studied by means of spectrophotometry in the light wavelength region of 0.5-2.5 μm. The refractive index value were determined from the transmission spectra. The dispersion parameters E0 and Ed were evaluated and considered in term of the average coordination number Z. The compositional dependences exhibit a peculiarity around Z=2.65-2.67 which can be connected with a topological phase transition of the film structure
Keywords :
antimony compounds; chalcogenide glasses; germanium compounds; optical dispersion; refractive index; semiconductor thin films; 0.5 to 2.5 micron; Ge-Sb-S; Ge-Sb-S thin film; composition dependence; coordination number; refractive index dispersion; spectrophotometry; structure; topological phase transition; transmission spectra; Dispersion; Gaussian processes; Newton method; Optical films; Optical refraction; Optical variables control; Oscillators; Refractive index; Solids; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
Type :
conf
DOI :
10.1109/SMICND.1998.732296
Filename :
732296
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=330983
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