Title :
Spectroscopical study of amorphous AsSe films containing tin impurity
Author :
Iovu, M.S. ; Popescu, M. ; Syrbu, N.N. ; Shutov, S.D. ; Vasiliev, I.A. ; Rebeja, S. ; Colomeico, E.
Author_Institution :
Inst. of Appl. Phys., Chisinau, Moldova
Abstract :
Optical absorption of thermally deposited AsSe films doped with Sn impurity (1 to 10 at.%) is studied in a wide energy interval from 0.8 to 6.2 eV by combination of reflection, absorption, photoresponse and photocapacitance spectroscopies. The effect of tin impurity on both extended and localized electronic states is revealed. Over the fundamental edge absorption region a correlation between the band tail width and optical gap is demonstrated for various tin concentrations
Keywords :
arsenic compounds; chalcogenide glasses; energy gap; impurity absorption spectra; photocapacitance; photoconductivity; reflectivity; semiconductor thin films; tin; 0.8 to 6.2 eV; AsSe:Sn; absorption spectroscopy; amorphous AsSe film; band tail width; electronic states; fundamental edge; optical absorption; optical gap; photocapacitance spectroscopy; photoresponse spectroscopy; reflection spectroscopy; thermal deposition; tin impurity; Absorption; Amorphous materials; Glass; Impurities; Integrated circuit modeling; Optical films; Physics; Reflectivity; Spectroscopy; Tin;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732299
