Spectroscopical study of amorphous AsSe films containing tin impurity

Author

Iovu, M.S. ; Popescu, M. ; Syrbu, N.N. ; Shutov, S.D. ; Vasiliev, I.A. ; Rebeja, S. ; Colomeico, E.

Author_Institution

Inst. of Appl. Phys., Chisinau, Moldova

Volume

1

fYear

1998

fDate

6-10 Oct 1998

Firstpage

105

Abstract

Optical absorption of thermally deposited AsSe films doped with Sn impurity (1 to 10 at.%) is studied in a wide energy interval from 0.8 to 6.2 eV by combination of reflection, absorption, photoresponse and photocapacitance spectroscopies. The effect of tin impurity on both extended and localized electronic states is revealed. Over the fundamental edge absorption region a correlation between the band tail width and optical gap is demonstrated for various tin concentrations

Keywords

arsenic compounds; chalcogenide glasses; energy gap; impurity absorption spectra; photocapacitance; photoconductivity; reflectivity; semiconductor thin films; tin; 0.8 to 6.2 eV; AsSe:Sn; absorption spectroscopy; amorphous AsSe film; band tail width; electronic states; fundamental edge; optical absorption; optical gap; photocapacitance spectroscopy; photoresponse spectroscopy; reflection spectroscopy; thermal deposition; tin impurity; Absorption; Amorphous materials; Glass; Impurities; Integrated circuit modeling; Optical films; Physics; Reflectivity; Spectroscopy; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.732299

Filename

732299