• DocumentCode
    331008
  • Title

    Heterostructures design optimisation

  • Author

    Dima, G. ; Mitrea, O. ; Govoreanu, B. ; Antonoiu, G ; Schoenmaker, W. ; Salmer, G. ; Profirescu, M.D.

  • Author_Institution
    Univ. Politehnica of Bucharest, Romania
  • Volume
    1
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    225
  • Abstract
    In this paper, the optimisation of heterostructure devices using Design of Experiments and Response Surface Model approaches is presented. As an example, the structural optimisation of a pseudomorphic Al0.2Ga0.8As/In0.2Ga0.8 As/GaAs pulse doped HEMT is discussed
  • Keywords
    III-V semiconductors; aluminium compounds; design of experiments; gallium arsenide; high electron mobility transistors; indium compounds; optimisation; semiconductor device models; semiconductor heterojunctions; surface fitting; Al0.2Ga0.8As-In0.2Ga0.8 As-GaAs; design of experiments; design optimisation; heterostructure device; pseudomorphic Al0.2Ga0.8As/In0.2As/GaAs pulse doped HEMT; response surface model; Ballistic transport; Circuit simulation; Computer science; Cutoff frequency; Design optimization; Doping; Electric breakdown; Power generation; Research and development; US Department of Energy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.732355
  • Filename
    732355
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=331008