Title :
Some features of interaction between phases in Ge/GaAs heterostructure
Author :
Dauletov, K.A. ; Kashin, G.N. ; Konakova, R.V. ; Lyapin, V.G. ; Milenin, V.V. ; Mitin, V.F.
Author_Institution :
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
Abstract :
We have studied (i) the effect of heat treatment in a vacuum on the electrical characteristics (barrier height and reverse current) of the Schottky contact based on the Ge/GaAs heterostructure and (ii) Auger concentration depth profiles of the heterosystem components
Keywords :
Auger electron spectra; III-V semiconductors; Schottky barriers; chemical interdiffusion; elemental semiconductors; gallium arsenide; germanium; heat treatment; semiconductor heterojunctions; Auger concentration depth profile; Ge-GaAs; Ge/GaAs heterostructure; Schottky contact; barrier height; electrical characteristics; interdiffusion; reverse current; vacuum heat treatment; Gallium arsenide; Germanium; Heat treatment; Heterojunctions; Magnetic sensors; Optical films; Optical sensors; Schottky barriers; Substrates; Temperature sensors;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732356
