• DocumentCode
    331013
  • Title

    Determination of the best incidence angle for ellipsometric measurements

  • Author

    Radoi, Rodica ; Flueraru, Costel

  • Author_Institution
    Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
  • Volume
    1
  • fYear
    1998
  • fDate
    6-10 Oct 1998
  • Firstpage
    245
  • Abstract
    Spectroscopic ellipsometry (SE) is a non-destructive optical method for physical characterization of thin films. From cosΔ and tanψ (simulated data) is possible to evaluate the best incidence angle in order to obtain the thickness, the composition, the refractive index and the dielectric functions of SiO2 layers and interfaces with the least errors
  • Keywords
    dielectric function; dielectric thin films; ellipsometry; refractive index measurement; silicon compounds; thickness measurement; SiO2; SiO2 thin film; composition; dielectric function; incidence angle; interface; nondestructive optical measurement; refractive index; spectroscopic ellipsometry; thickness; Dielectric measurements; Dielectric thin films; Goniometers; Optical films; Optical polarization; Optical reflection; Optical refraction; Phase measurement; Research and development; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-4432-4
  • Type

    conf

  • DOI
    10.1109/SMICND.1998.732361
  • Filename
    732361
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=331013