Title :
Structural defects and deep acceptors in silicon carbide
Author :
Lebedev, Alexander A.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
Abstract :
In the present work the parameters and distribution of deep centres in 6H and 4H SiC epitaxial layers and pn junctions grown by sublimation in an open system (SE) and by chemical vapor deposition (CVD) were investigated. The deep level ionization energies and hole and electron capture cross-sections were determined by deep level transient spectroscopy (DLTS). The possible structure of the observed centres and its influence on polytype transformation is discussed
Keywords :
deep level transient spectroscopy; deep levels; defect states; impurity states; p-n junctions; polymorphism; semiconductor epitaxial layers; semiconductor materials; silicon compounds; 4H-SiC epitaxial layer; 6H-SiC epitaxial layer; SiC; chemical vapor deposition; deep acceptor; deep level transient spectroscopy; electron capture cross-section; hole capture cross-section; ionization energy; p-n junction; polytype transformation; silicon carbide; structural defect; sublimation; Computational Intelligence Society; Conductivity; Ionization; Neodymium; Radioactive decay; Silicon carbide;
Conference_Titel :
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-4432-4
DOI :
10.1109/SMICND.1998.732369
