Structural defects and deep acceptors in silicon carbide

Author

Lebedev, Alexander A.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

Volume

1

fYear

1998

fDate

6-10 Oct 1998

Firstpage

267

Abstract

In the present work the parameters and distribution of deep centres in 6H and 4H SiC epitaxial layers and pn junctions grown by sublimation in an open system (SE) and by chemical vapor deposition (CVD) were investigated. The deep level ionization energies and hole and electron capture cross-sections were determined by deep level transient spectroscopy (DLTS). The possible structure of the observed centres and its influence on polytype transformation is discussed

Keywords

deep level transient spectroscopy; deep levels; defect states; impurity states; p-n junctions; polymorphism; semiconductor epitaxial layers; semiconductor materials; silicon compounds; 4H-SiC epitaxial layer; 6H-SiC epitaxial layer; SiC; chemical vapor deposition; deep acceptor; deep level transient spectroscopy; electron capture cross-section; hole capture cross-section; ionization energy; p-n junction; polytype transformation; silicon carbide; structural defect; sublimation; Computational Intelligence Society; Conductivity; Ionization; Neodymium; Radioactive decay; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International

Conference_Location

Sinaia

Print_ISBN

0-7803-4432-4

Type

conf

DOI

10.1109/SMICND.1998.732369

Filename

732369