DocumentCode
331021
Title
Experiments on electron-beam irradiation effects on junction field effect transistors
Author
Codreann, C. ; Iliescu, Elena
Author_Institution
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Volume
1
fYear
1998
fDate
6-10 Oct 1998
Firstpage
275
Abstract
The paper describes some results concerning electron-beam irradiation effects on dual monolithic n-channel junction field effect transistors. Devices were gradually irradiated up to 8 Mrad in steps of 1 Mrad or 2 Mrad at room temperature. After each irradiation operation, their electrical parameters were measured and finally we have analyzed the structural modifications in devices and their irradiation hardness
Keywords
electron beam effects; junction gate field effect transistors; radiation hardening (electronics); 8 Mrad; device structure; dual monolithic n-channel junction field effect transistor; electrical parameters; electron beam irradiation; radiation hardness; Current measurement; Doping; Electrons; FETs; Laser theory; Physics; Plasma devices; Plasma temperature; Space vector pulse width modulation; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.732373
Filename
732373
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