DocumentCode
3310244
Title
Investigation Modulator on Slot Line with Surface Oriented p - i - n Structures
Author
Ivanyuta, O.M. ; Kishenko, Ya.I. ; Prokopenko, O.V.
Author_Institution
Kiev Taras Shevchenko Univ., Kiev
Volume
2
fYear
2007
fDate
25-30 June 2007
Firstpage
714
Lastpage
715
Abstract
In this work the results of investigation of the integral modulator on slot line with surface oriented p - i - n structures are given. Controlling devices in integral performance with the switch delay 1 - 2 micron are worked out mainly on microstrip transmission lines. Controlling devices with high operating speed are worked out on the surface - oriented p - i - n structures. Investigation of integrated surface oriented p-i-n structures showed good operating characteristics under the application of a powerful electromagnetic wave. All structures shown good operating characteristics at a high power level Ppulse 10 kW. The high-speed response for surface-devices is better than for bulk-diodes. The structure of GaAs has some advantages over the silicon in terms of the high speed response, but they work only at low microwave power levels.
Keywords
III-V semiconductors; gallium arsenide; microstrip lines; modulators; p-i-n diodes; GaAs; bulk-diodes; controlling devices; electromagnetic waves; gallium arsenide structure; high speed response; integral modulator; integrated surface oriented p-i-n structures; low microwave power levels; microstrip transmission lines; power 10 kW; slot line; Delay; Electromagnetic scattering; Gallium arsenide; Microstrip; PIN photodiodes; Power transmission lines; Response surface methodology; Silicon; Surface waves; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location
Kharkov
Print_ISBN
1-4244-1237-4
Type
conf
DOI
10.1109/MSMW.2007.4294788
Filename
4294788
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