DocumentCode
331029
Title
Correlation between chemical composition of transitional layer and electro-physical properties of Me-n-InP Schottky barriers
Author
Korotchenkov, G.S. ; Bejan, N.P.
Author_Institution
Lab. of Microelectron., Tech. Univ. of Moldova, Kishinev, Moldova
Volume
1
fYear
1998
fDate
6-10 Oct 1998
Firstpage
301
Abstract
In this report results of the analysis of tunnel transparency and physical-chemical properties of transitional layer between metal and InP real surface have been presented. It was determined that electro-physical properties of Me-n-InP Schottky barriers are correlated with chemical composition of InP own oxides. For explanation of shown effects, it was proposed the model of transitional layer and mechanism of it´s property changing during thermal treatment
Keywords
III-V semiconductors; Schottky barriers; heat treatment; indium compounds; oxidation; semiconductor-metal boundaries; tunnelling; InP; chemical composition; electro-physical properties; metal-n-InP Schottky barrier; surface oxide; thermal treatment; transitional layer; tunnel transparency; Chemicals; Electromagnetic wave absorption; Electrons; Indium phosphide; Microelectronics; Oxidation; Schottky barriers; Spectroscopy; Surface charging; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1998. CAS '98 Proceedings. 1998 International
Conference_Location
Sinaia
Print_ISBN
0-7803-4432-4
Type
conf
DOI
10.1109/SMICND.1998.732384
Filename
732384
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