Title :
Reflected waves and their associated current
Author :
Leggate, D. ; Pankau, J. ; Schlegel, D. ; Kerkman, R. ; Skibinski, G.
Author_Institution :
Stand. Drives Div., Rockwell Autom., Mequon, WI, USA
Abstract :
Reflected wave transient voltages that result from fast IGBT voltage source inverters have received considerable investigation. The modeling and simulation of these transients requires sophisticated motor and cable models. Most voltage source PWM adjustable speed drive suppliers now provide combinations of passive and active control techniques to mitigate the adverse effects of overvoltage stress, however, the cost of the passive fixes often exceed the cost of the drive. Another aspect of low rise time devices, heretofore not examined to the extent of the overvoltage problem, is the resulting current from traveling waves. In this paper a historical perspective of the overvoltage problem is presented. Models of system components are reviewed and simulation results are compared with experimental results. These models are then employed to predict the peak currents from voltage source inverters as the cable, load, and IGBT rise time are altered. The paper then examines the consequences of reflected wave currents on current sensing, drive control, and device performance. From these results, a minimum rise time is established.
Keywords :
AC motor drives; PWM invertors; electric current measurement; insulated gate bipolar transistors; machine control; overvoltage; transients; variable speed drives; IGBT rise time; active control; current sensing; device performance; drive control; fast IGBT voltage source inverters; minimum rise time; overvoltage stress effects mitigation; passive control; reflected wave currents; reflected wave transient voltages; voltage source PWM adjustable speed drive; Costs; Frequency; Insulated gate bipolar transistors; Packaging; Power cables; Predictive models; Pulse width modulation; Pulse width modulation inverters; Variable speed drives; Voltage control;
Conference_Titel :
Industry Applications Conference, 1998. Thirty-Third IAS Annual Meeting. The 1998 IEEE
Conference_Location :
St. Louis, MO, USA
Print_ISBN :
0-7803-4943-1
DOI :
10.1109/IAS.1998.732416