Title :
Low-Noise pHEMT Amplifier Operating at Extra-Low Supply Voltage and Power
Author :
Korolev, A.M. ; Shulga, V.M.
Author_Institution :
Inst. of Radio Astron., NAS of Ukraine, Kharkov
Abstract :
We report on the successful development of an extra-low supply single-drain-operated amplifier intended for use as a general-purpose LNA for the practical frequency band over 1.5 to 2.5 GHz. It is a two-stage amplifier based on cost-effective commercial pHEMTs. The amplifier design and performance is discussed.
Keywords :
HEMT circuits; UHF amplifiers; low noise amplifiers; low-power electronics; LNA; extra-low supply voltage; frequency 1.5 GHz to 2.5 GHz; low-noise pHEMT amplifier; single-drain-operated amplifier; two-stage amplifier; Energy consumption; Frequency; Germanium silicon alloys; Low-noise amplifiers; Noise figure; Noise measurement; PHEMTs; Power supplies; Silicon germanium; Voltage;
Conference_Titel :
Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves and Workshop on Terahertz Technologies, 2007. MSMW '07. The Sixth International Kharkov Symposium on
Conference_Location :
Kharkov
Print_ISBN :
1-4244-1237-4
DOI :
10.1109/MSMW.2007.4294799
